Capture cross section analysis of four-level Random-Telegraph-Noise in Gate-Induced Drain Leakage current

In this paper, we measured four-level Random Telegraph Noise (RTN) in Gate Induced Drain Leakage (GIDL) current of Metal Oxide Semiconductor Field Effect Transistor (MOSFET). Using RTN measurement data, we extracted fundamental parameters of each trap, such as the trap depth (x_T) and energy level (E_Cox-E_T). To correctly interpret capture and emission process, capture cross section (σ_c) of the traps was extracted by applying more accurate capture cross section model and bias dependence of σ_c was analyzed using potential barrier lowering.