DocumentCode
3389303
Title
Thermal transient modeling and experimental validation in the European project PROFIT
Author
Pape, Heinz ; Schweitzer, Dirk ; Janssen, J.H.J. ; Morelli, Arianna ; Villa, Claudio M.
Author_Institution
Corp. Assembly & Test, Infineon Technol. AG, Muenchen, Germany
fYear
2003
fDate
11-13 March 2003
Firstpage
247
Lastpage
254
Abstract
Results of the European project PROFIT on thermal transient measurement and modeling of IC packages are presented. All together 16 different packages from the three semiconductor manufacturers Infineon, Philips and ST Microelectronics were measured in four dual cold plate (DCP) environments as defined in the preceding DELPHI and SEED projects. Solutions to measure TO-type and fine pitch packages in the DCP, especially for the critical DCP-4 boundary condition were demonstrated, as well as reduction of interface resistance and increased reproducibility by using Wood´s alloy as an interface material. The measurements were simulated using the commercial software packages ANSYS®, FLOTHERM® or MARC®. The agreement between simulated and measured thermal impedance is quite good (<15%) from steady state (t=1000s) to transients with t<0.1s, i.e. 4 orders of magnitude. In a few cases, this level of accuracy was kept even over 7 orders of magnitude. Increasing relative inaccuracy with shorter transients corresponds to small absolute errors in temperature. So for practical pulse temperature prediction, the accuracy should already be sufficient, for extraction of geometrical and material parameters, it is probably not.
Keywords
integrated circuit measurement; integrated circuit modelling; integrated circuit packaging; thermal management (packaging); thermal resistance; thermal variables measurement; transient response; 1000 s; DCP; DCP-4 boundary condition; IC packages; TO-type packages; Wood´s alloy interface material; dual cold plate environment; fine pitch packages; interface resistance; pulse temperature prediction accuracy; thermal impedance; thermal management; thermal transient measurement; thermal transient modeling; Boundary conditions; Cold plates; Electrical resistance measurement; Integrated circuit modeling; Integrated circuit packaging; Microelectronics; Reproducibility of results; Semiconductor device manufacture; Semiconductor device packaging; Software measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Thermal Measurement and Management Symposium, 2003. Ninteenth Annual IEEE
ISSN
1065-2221
Print_ISBN
0-7803-7793-1
Type
conf
DOI
10.1109/STHERM.2003.1194370
Filename
1194370
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