Title :
InP FinFETs with damage-free and record high-aspect-ratio (45∶1) fins fabricated by metal-assisted chemical etching
Author :
Yi Song ; Mohseni, Parsian K. ; Seung Hyun Kim ; Jae Cheol Shin ; Chen Zhang ; Chabak, Kelson ; Xiuling Li
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Illinois at Urbana-Champaign, Urbana, IL, USA
Abstract :
Damage-free metal-assisted chemical etching (MacEtch) was used to fabricate InP junctionless FinFETs with ultra-high aspect ratio (~ 45:1) fins. For devices with Lg = 560 nm, 20 - 32 nm fin width, and 600 nm active fin height, Ion/Ioff ~ 106, and near-ideal subthreshold swing (70 mV/dec) were achieved.
Keywords :
III-V semiconductors; MOSFET; etching; indium compounds; InP; InP junctionless FinFET; damage-free MacEtch; damage-free metal-assisted chemical etching; size 20 nm to 32 nm; size 560 nm; size 600 nm; ultra-high aspect ratio fins; Arrays; Etching; Gold; Hafnium; III-V semiconductor materials; Indium phosphide; Logic gates;
Conference_Titel :
Device Research Conference (DRC), 2015 73rd Annual
Conference_Location :
Columbus, OH
Print_ISBN :
978-1-4673-8134-5
DOI :
10.1109/DRC.2015.7175665
