Title :
Analysis of power switching devices and power electronics circuits using two-dimensional device models
Author :
Ise, T. ; Murakami, Y.
Author_Institution :
Osaka Univ., Japan
Abstract :
Two-dimensional device model based simulation of power MOSFETs and of power electronics circuits are presented. In order to develop MOSFETs with lower on-resistance at the low temperature region around 80 K device characteristics of a MOSFET for various temperature were examined. Simulated drain characteristics showed good agreement with experimental results. Circuit simulation using two-dimensional device models needs more computation time and memories than the simulation using equivalent circuit models for switching devices such as SPICE type device models.
Keywords :
circuit analysis computing; digital simulation; insulated gate field effect transistors; power electronics; power transistors; semiconductor device models; 80 K; MOSFET; circuit simulation; drain characteristics; power electronics circuits; power switching devices; two-dimensional device models; Active appearance model; Circuit analysis; Circuit simulation; Computational modeling; Equations; MOSFETs; Power engineering and energy; SPICE; Switching circuits; Temperature;
Conference_Titel :
Computers in Power Electronics, 1992., IEEE Workshop on
Conference_Location :
Berkeley, CA, USA
Print_ISBN :
0-7803-0920-0
DOI :
10.1109/CIPE.1992.247304
