Failure analysis case studies using the IR-OBIRCH (infrared optical beam induced resistance change) method

Author

Nikawa, Kiyoshi ; Inoue, Shoji ; Morimoto, Kazuyuki ; Sone, Shinya

Author_Institution

Device Anal. Technol. Lab., NEC Corp., Japan

fYear

1999

fDate

1999

Firstpage

394

Lastpage

399

Abstract

The IR-OBIRCH (infrared optical beam induced resistance change) method was proposed and developed by Nikawa and Tozaki in 1993 and this method has been shown to be applicable for detecting defects and current paths by using test structures and/or artificial failures. Here we present the results of the actual failure analysis from real failures of DRAMs, ASICs, power MOSFETs and microcomputers, which failed during mass production, development, user tests, and ESD simulation. In the analysis of a microcomputers we applied test vectors from an ATE docked to the IR-OBIRCH system, in order to reproduce the failure state during IR-OBIRCH imaging. The results showed that the IR-OBIRCH is suitable not only for improving reliability but also for increasing yield

Keywords

DRAM chips; OBIC; application specific integrated circuits; automatic test equipment; electrostatic discharge; failure analysis; integrated circuit reliability; integrated circuit testing; integrated circuit yield; power MOSFET; semiconductor device testing; ASICs; ATE; DRAMs; ESD simulation; IR-OBIRCH; current paths; failure analysis; failure state; infrared optical beam induced resistance change; power MOSFETs; reliability; test structures; yield; Analytical models; Electrostatic discharge; Failure analysis; Image analysis; Infrared detectors; MOSFETs; Mass production; Microcomputers; Optical beams; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Symposium, 1999. (ATS '99) Proceedings. Eighth Asian

Conference_Location

Shanghai

ISSN

1081-7735

Print_ISBN

0-7695-0315-2

Type

conf

DOI

10.1109/ATS.1999.810781

Filename

810781