Title :
Heavy ion test results on memories
Author :
Ecoffet, R. ; Labrunee, M. ; Duzellier, S. ; Falguere, D.
Author_Institution :
CNES, Toulouse, France
Abstract :
A synthesis is presented of heavy ion single event upset and latch-up sensitivity test results on 12 memory types from various technologies. Test data for CMOS and SOI SRAMs, FG/EEPROMs and SNOS/EEPROMs are presented. After a presentation of the test conditions, the interpretation of the results for high density technologies are discussed. The test results are then summarized and discussed in detail. The data collected for high density SRAMs revealed a deviation from the effective LET cos theta law. This phenomenon may be correlated to the shape of the sensitive area. Some products exhibited a strong sensitivity asymmetry (0 to 1 or 1 to 0 transitions). This effect has been correlated to the basic cell design. In addition, an ion species dependence has been noticed for one type. A normalized plot showing a common behaviour of all the devices tested is presented. With respect to these phenomena, some guidelines are suggested to achieve a full characterization of the devices.
Keywords :
CMOS integrated circuits; EPROM; SRAM chips; aerospace instrumentation; aerospace simulation; integrated circuit testing; ion beam effects; radiation hardening (electronics); CMOS SRAM; FG/EEPROMs; SEU test; SNOS/EEPROMs; SOI SRAMs; effective LET cos theta law; heavy ion testing; high density technologies; ion species dependence; latch-up sensitivity test; memories; sensitivity asymmetry; space electronics; CMOS technology; Circuit testing; Logic testing; Random access memory; Shape; Single event upset; Space technology; Statistical analysis; System testing; Test facilities;
Conference_Titel :
Radiation Effects Data Workshop, 1992. Workshop Record., 1992 IEEE
Conference_Location :
New Orleans, LA, USA
Print_ISBN :
0-7803-0930-8
DOI :
10.1109/REDW.1992.247328
