Title :
Ion-irradiated In0.53Ga0.47As based photoconductive antennas excited at 1.55 μm for time domain terahertz spectroscopy
Author :
Mangeney, J. ; Chimot, N. ; Meignien, L. ; Zerounian, N. ; Crozat, P. ; Blary, K. ; Lampin, J.F. ; Mounaix, P.
Author_Institution :
CNRS UMR 8622, Univ. Paris Sud, Orsay
Abstract :
We present a time-domain terahertz spectroscopy set up based on Er:fiber laser which delivers pulses at 1.55 mum wavelength and that integrates photoconductive antennas made on heavy ion-irradiated In0.53Ga0.47As material as emitter and detector. A detailed study of the effect of the carrier lifetime on the terahertz signal characteristics has been performed. Improvements in bandwidth and in average power of the emitted terahertz radiation are observed with the decrease of the carrier lifetime on the emitter. The average power radiated is comparable with or greater than that emitted by similar low temperature grown GaAs photoconductive antennas excited by 780 nm wavelength optical pulses.
Keywords :
III-V semiconductors; antennas; carrier lifetime; gallium arsenide; indium compounds; photoconducting devices; submillimetre wave spectroscopy; submillimetre waves; Er:fiber laser; In0.53Ga0.47As; carrier lifetime effect; detector; emitter; ion-irradiated photoconductive antennas; terahertz radiation; terahertz signal characteristics; time domain terahertz spectroscopy; wavelength 1.55 micron; Bandwidth; Charge carrier lifetime; Gallium arsenide; Optical materials; Optical pulses; Photoconducting materials; Photoconductivity; Spectroscopy; Temperature; Time domain analysis; Photoconductive materials; Terahertz; telecommunication systems; ultrafast semiconductor;
Conference_Titel :
Infrared and Millimeter Waves, 2007 and the 2007 15th International Conference on Terahertz Electronics. IRMMW-THz. Joint 32nd International Conference on
Conference_Location :
Cardiff
Print_ISBN :
978-1-4244-1438-3
DOI :
10.1109/ICIMW.2007.4516674