A D-band monolithic fundamental oscillator using InP-based HEMTs

Author

Kwon, Y. ; Pavlidis, D. ; Brock, T. ; Streit, D.C.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

fYear

1993

fDate

14-15 June 1993

Firstpage

10

Abstract

The design and experimental characteristics of the first fundamental D-band monolithic high-electron-mobility transistor (HEMT) oscillator are reported. The circuit is based on a dual feedback topology and uses 0.1- mu m pseudomorphic double heterojunction InAIAs/In/sub 0.7/Ga/sub 0.3/As HEMTs. It includes on-chip bias circuitry and an integrated E-field probe for direct radiation into the waveguide. An oscillation frequency of 130.7 GHz was measured and the output power level was -7.0 dBm using HEMTs of small gate periphery (90 mu im). This represents the highest frequency of fundamental signal generation out of monolithic chips.<>

Keywords

III-V semiconductors; MMIC; feedback; field effect integrated circuits; high electron mobility transistors; indium compounds; microwave oscillators; 0.1 micron; 130.7 GHz; D-band; EHF; InAlAs-In/sub 0.7/Ga/sub 0.7/As-InP; InP substrate; MIMIC; MM-wake type; MMIC; dual feedback topology; fundamental signal generation; high-electron-mobility transistor; integrated E-field probe; millimetre wave type; monolithic fundamental oscillator; monolithic microwave IC; on-chip bias circuitry; pseudomorphic double heterojunction; Circuit topology; Feedback circuits; Frequency measurement; HEMTs; Heterojunctions; MODFETs; Oscillators; Power measurement; Probes; Semiconductor device measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1993. Digest of Papers., IEEE 1993

Conference_Location

Atlanta, GA, USA

Print_ISBN

0-7803-1322-4

Type

conf

DOI

10.1109/MCS.1993.247479

Filename

247479