Title :
Plasma induced charging damage and oxide degradation after dry etch processing
Author :
Karzhavin, Yuri ; Wu, Wei
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
Plasma induced charging damage and oxide degradation after metal and poly etch and photo-resist strip were studied using unpatterned oxide wafer technique. The time dependence of plasma induced charging, internal oxide damage and charging “fingerprint” were investigated for poly etch, metal etch and photo-resist strip after metal etch processes. Comparison of oxide charging monitor results and SPIDER antennae structures data for photo-resist strip process is presented
Keywords :
photoresists; sputter etching; surface charging; SPIDER antenna; dry etch processing; fingerprint; metal; monitor; oxide degradation; photoresist strip; plasma induced charging damage; polysilicon; unpatterned wafer technique; Degradation; Dry etching; Monitoring; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma measurements; Plasma sources; Surface charging; Surface discharges;
Conference_Titel :
Advanced Semiconductor Manufacturing Conference and Workshop, 1997. IEEE/SEMI
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-4050-7
DOI :
10.1109/ASMC.1997.630741
