DocumentCode
339401
Title
Transimpedance gain modelling of optical receivers employing a pin photodiode and HBT distributed amplifier combination
Author
Iqbal, Ahmer ; Darwazeh, Izzat Z.
Author_Institution
Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK
fYear
1999
fDate
1999
Firstpage
42430
Lastpage
42438
Abstract
In this paper we discuss how the general small-signal gain formulation reported in our earlier publication may be applied in order to arrive at an analytical expression for the transimpedance gain of arbitrarily terminated HBT distributed amplifier (DA) based optical receivers. This expression includes all of the major intrinsic and parasitic elements associated with HBTs and also incorporates the primary elements of p-i-n photodiodes. The accuracy of the transimpedance gain expression is assessed by comparison with results from simulations. Graphical results based on the derived expression are presented to show how the various HBT, distributed amplifier and photodiode parameters affect the transimpedance gain performance of optical receivers. The trends shown in these graphs are discussed in relation to the general circuit properties of the combined HBT DA and p-i-n photodiode system, with a view to providing a basic insight into the design of such receivers
Keywords
optical receivers; HBT distributed amplifier; circuit properties; intrinsic elements; optical receivers; parasitic elements; pin photodiode; small-signal gain formulation; transimpedance gain modelling;
fLanguage
English
Publisher
iet
Conference_Titel
Opto-Electronic Interfacing at Microwave Frequencies (Ref. No. 1999/045), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19990230
Filename
771939
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