DocumentCode :
3396626
Title :
Electromechanical properties of acceptor-doped lead-free piezoelectrics
Author :
Taghaddos, E. ; Hejazi, Mohsen ; Safari, Abdolreza
Author_Institution :
Dept. of Mater. Sci. & Eng., Rutgers, State Univ. of New Jersey, Piscataway, NJ, USA
fYear :
2013
fDate :
21-25 July 2013
Firstpage :
66
Lastpage :
68
Abstract :
In this paper, the processing and electrocmechanical of Mn-doped BNT-based ceramics prepared by mixed oxide route have been studied. Different amounts of Mn (0.01, 0.014, 0.015, 0.016, 0.017, 0.02, and 0.022) were doped to the 0.88[Bi0.5Na0.5TiO3]-0.08[Bi0.5K0.5TiO3]-0.04[Bi0.5Li0.5TiO3] ceramics. Samples were sintered at different temperatures (1075-1150 °C) to achieve the highest density and mechanical quality factor. Mn-doping resulted in a considerable enhancement of Qm in both planar and thickness vibration modes. In 1.5 mol.% Mn-doped ceramics sintered at 1100 °C, a planar Qm of about 970 and tanδ of 0.88% were obtained. Mn-doping also resulted in decreasing coupling coefficients, piezoelectric charge coefficient, and dielectric constant.
Keywords :
Q-factor; bismuth compounds; doping; electromechanical effects; lithium compounds; permittivity; piezoceramics; potassium compounds; sintering; sodium compounds; vibrational modes; Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3-Bi0.5Li0.5TiO3; acceptor-doped lead-free piezoelectrics; ceramics; coupling coefficients; dielectric constant; doping; electromechanical properties; mechanical quality factor; piezoelectric charge coefficient; planar vibration modes; temperature 1075 degC to 1150 degC; thickness vibration modes; Dielectric constant; Lead; Manganese; Piezoelectric polarization; Bismuth sodium titanate; Hard piezoelectrics; Lead-free; Mn-doping;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the
Conference_Location :
Prague
Type :
conf
DOI :
10.1109/ISAF.2013.6748689
Filename :
6748689
Link To Document :
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