Title :
1.54 μm Monolithically Integrated GaSb Quantum Well Laser Diode on Silicon Operating at 77K
Author :
Huffaker, D.L. ; Balakrishnan, G. ; Jallipalli, A. ; Kutty, M.N. ; Tatebayashi, J. ; Huang, S.H. ; Dawson, L.R. ; Mi, Z. ; Bhattacharya, P.
Author_Institution :
New Mexico Univ., Albuquerque
fDate :
July 29 2007-Aug. 11 2007
Abstract :
We present a GaSb quantum well laser diode grown monolithically on a Si(100)-5° substrate. The device lases under pulsed, 77 K conditions at 1.54 μm with threshold current density of 1 kA/cm2 for a 100 μm times 1 mm stripe.
Keywords :
III-V semiconductors; current density; gallium compounds; integrated optoelectronics; quantum well lasers; GaSb; Si; monolithically integrated quantum well laser diode; silicon; temperature 77 K; threshold current density; wavelength 1.54 μm; Diode lasers; III-V semiconductor materials; Lattices; Materials science and technology; Optical materials; Quantum dot lasers; Semiconductor diodes; Silicon; Substrates; Threshold current;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302845
