• DocumentCode
    3397552
  • Title

    Elimination of parasitic generation in power X-band internally matched transistors with high associated gain

  • Author

    Galdetskiy, A.V. ; Manchenko, L.V. ; Pashkovskii, A.B. ; Pchelin, V.A.

  • Author_Institution
    Fed. State Unitary Corp. R&PC, Fryazino
  • fYear
    2008
  • fDate
    8-12 Sept. 2008
  • Firstpage
    75
  • Lastpage
    76
  • Abstract
    Stability problems for X-band internally matched HEMTpsilas with output power higher than 10 W, associated gain higher than 13 dB are discussed. Several variants of schematic design for parasitic generation elimination are proposed.
  • Keywords
    amplification; power HEMT; stability; associated gain; parasitic generation; power X-band internally matched HEMT; schematic design; stability; Crops; Helium; IEEE catalog; Microwave technology; Organizing; Power amplifiers; Power generation; Topology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology, 2008. CriMiCo 2008. 2008 18th International Crimean Conference
  • Conference_Location
    Sevastopol, Crimea
  • Print_ISBN
    978-966-335-166-7
  • Electronic_ISBN
    978-966-335-169-8
  • Type

    conf

  • DOI
    10.1109/CRMICO.2008.4676297
  • Filename
    4676297
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3397552