SiO2/SiN infrared absorbing films for uncooled pyroelectric sensor and its fabrication and evaluation

Author

Oishi, Kazuaki ; Oe, Katsutoshi ; Ishida, Makoto ; Akai, Daisuke

Author_Institution

Electr. & Electron. Inf. Dept., Toyohashi Univ. of Technol., Toyohashi, Japan

fYear

2013

fDate

21-25 July 2013

Firstpage

329

Lastpage

331

Abstract

In this paper, we report a development of fabrication processes and characteristics of uncooled pyroelectric infrared sensor using epitaxial Pb(Zr,Ti)O₃ thin film on γ-Al₂O₃/Si substrate. Newly designed SiO₂/SiN double layer absorbing film is calculated and evaluated to fabricate on the sensor for infrared absorption efficiency improvement. The absorption of 70% is achieved with the double layer thickness of 1.4 μm in wavelength between 8 to 12 μm. Infrared responsivity of 176 V/W is obtained at 10 Hz.

Keywords

infrared detectors; lead compounds; piezoelectric devices; pyroelectric detectors; silicon compounds; thin film sensors; Al₂O₃-Si; PZT-SiO₂-SiN; absorption efficiency; double layer infrared absorbing film; epitaxial thin film; frequency 10 Hz; uncooled pyroelectric sensor; wavelength 8 mum to 12 mum; Epitaxial growth; Equations; Indexes; Infrared sensors; Insulators; Silicon; Silicon compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Applications of Ferroelectric and Workshop on the Piezoresponse Force Microscopy (ISAF/PFM), 2013 IEEE International Symposium on the

Conference_Location

Prague

Type

conf

DOI

10.1109/ISAF.2013.6748751

Filename

6748751