Title :
Kinetic behaviors and dielectric strength of SF6 and N2 over the E/N range from 160 to 650Td
Author :
Zheng, Dianchun ; Chen, Xuefeng ; Zhang, Lianxing
Author_Institution :
Key Lab. of Eng. Dielectric & Its Applic., Harbin Univ. of Sci. & Technol., Harbin, China
Abstract :
Mixing SF6 with N2 in appropriate percentage partial pressure and the mixtures show a lot of benefits, therefore, the electron swarm behaviors of SF6 and N2 are considered from the kinetic point of view. According to the collision cross sections of SF6 and N2, the electron swarm transport coefficients such as the centre-of-mass drift velocity, the ionization coefficient, the attachment coefficient and so on are calculated for the steady-state Townsend, pulsed Townsend and time-of-flight experiments over the E/N range from 160 to 650Td by a Boltzmann equation method. Then the electron energy distributions of SF6 and N2 are analyzed in detail, what is more, the density-reduced ionization coefficient alpha/N, the density-reduced attachment coefficient eta/N and the density-reduced effective ionization coefficient alphamacr/N are calculated and their curves are plotted, so the dielectric strength of SF6 and N2 could be evaluated, respectively.
Keywords :
Boltzmann equation; Townsend discharge; electric strength; ionisation; kinetic theory; Boltzmann equation method; centre-of-mass drift velocity; density-reduced ionization coefficient; dielectric strength; electron energy distributions; electron swarm behaviors; electron swarm transport coefficients; kinetic behaviors; pulsed Townsend; steady-state Townsend; Anodes; Boltzmann equation; Cathodes; Dielectric breakdown; Discharges; Electron mobility; Ionization; Kinetic theory; Steady-state; Sulfur hexafluoride; dielectric strength; electron energy distributions; kinetic behaviors;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2009. ICPADM 2009. IEEE 9th International Conference on the
Conference_Location :
Harbin
Print_ISBN :
978-1-4244-4367-3
Electronic_ISBN :
978-1-4244-4368-0
DOI :
10.1109/ICPADM.2009.5252355