Title :
The Effect of p-InGaN layer on ITO based ohmic contacts to p-GaN
Author :
Han, Yanjun ; Liu, Zhongtao ; Luo, Yi ; Ma, Hongxia ; Zhang, Xianpeng ; Wang, Lai
Author_Institution :
Tsinghua Univ., Beijing
fDate :
July 29 2007-Aug. 11 2007
Abstract :
By epitaxy of a thin p-lnGaN layer on p-GaN surface and optimization of InGaN/GaN heterostructures annealing condition, ohmic contact to p-GaN with high transparency was obtained by using electron beam evaporated indium tin oxide film.
Keywords :
III-V semiconductors; annealing; epitaxial growth; gallium compounds; indium compounds; ohmic contacts; semiconductor epitaxial layers; semiconductor heterojunctions; ITO; InGaN-GaN; annealing; epitaxy; heterostructures; indium tin oxide film; ohmic contacts; transparency; Annealing; Contact resistance; Epitaxial growth; Gallium nitride; Indium tin oxide; Laboratories; Light emitting diodes; Ohmic contacts; Sheet materials; Temperature;
Conference_Titel :
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location :
Beijing
Print_ISBN :
978-1-4244-1591-5
DOI :
10.1109/INOW.2007.4302897
