DocumentCode
3398519
Title
Effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED
Author
Lai Wang ; Luo, Yi ; Jiaxing Wang ; Li, Hongtao ; Xi, Guangyi ; Jiang, Yang ; Sun, Changzheng ; Han, Yanjun
Author_Institution
Tsinghua Univ., Beijing
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
130
Lastpage
131
Abstract
The effect of Mg-doping adjacent to active region on the efficiency of InGaN blue MQW LED was investigated. The tunneling recombination and the Mg diffusion models were used to explain the optimized Mg concentration.
Keywords
III-V semiconductors; diffusion; doping profiles; gallium compounds; indium compounds; light emitting diodes; magnesium; tunnelling; wide band gap semiconductors; InGaN:Mg; Mg-doping; blue LED; capacitance-voltage characteristics; diffusion models; dopant concentration; light power-current characteristics; tunneling recombination; Capacitance-voltage characteristics; Gallium nitride; Integrated optoelectronics; Laboratories; Light emitting diodes; Quantum well devices; Radiative recombination; Sun; Temperature; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302916
Filename
4302916
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