DocumentCode
3398722
Title
Phosphor-free White-light Light-emitting Diodes Based on Prestrained InGaN/GaN Quantum Wells
Author
Lu, Chih-Feng ; Huang, Chi-Feng ; Yeh, Dong-Ming ; Chen, Yung-Sheng ; Shiao, Wen-Yu ; Yang, C.C.
Author_Institution
Nat. Taiwan Univ., Taipei
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
154
Lastpage
155
Abstract
A prestrained MOCVD growth technique is introduced to enhance the indium incorporation of InGaN/GaN quantum wells for effectively emitting yellow-red light such that white-light light-emitting diodes can be fabricated without using phosphors.
Keywords
III-V semiconductors; MOCVD; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; InGaN-GaN; MOCVD growth technique; indium incorporation; phosphor-free white-light light-emitting diodes; quantum wells; yellow-red light; Capacitive sensors; Electronic mail; Gallium nitride; Indium; Light emitting diodes; MOCVD; Phosphors; Photonic band gap; Stark effect; X-ray scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302928
Filename
4302928
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