DocumentCode
3398804
Title
Surface Plasmon Coupling with an InGaN/GaN Quantum Well for Enhancing Light Emission Efficiency
Author
Lu, Yen-Cheng ; Chen, Cheng-Yen ; Yeh, Dong-Ming ; Shen, Kun-Ching ; Huang, Chi-Feng ; Yang, C.C.
Author_Institution
Nat. Taiwan Univ., Taipei
fYear
2007
fDate
July 29 2007-Aug. 11 2007
Firstpage
164
Lastpage
165
Abstract
After several fundamental phenomena of surface plasmon coupling with an InGaN/GaN quantum well for light emission enhancement are studied, we evaluate the application of such a coupling process to a light-emitting diode with experimental supports.
Keywords
III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; surface plasmons; InGaN-GaN; light emission efficiency; light-emitting diode; quantum well; surface plasmon coupling; Frequency conversion; Gallium nitride; Light emitting diodes; Optical coupling; Photoluminescence; Plasmons; Radiative recombination; Stark effect; Temperature dependence; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
Conference_Location
Beijing
Print_ISBN
978-1-4244-1591-5
Type
conf
DOI
10.1109/INOW.2007.4302933
Filename
4302933
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