Title :
A novel method for accurate measurement and decoupling of SRAM standby leakage
Author :
Qing Dong ; Yanan Ma ; Hao Chen ; Hui Li ; Yu Jiang ; Ningxi Liu ; Wenxiang Jian ; Xiaoyong Xue ; Lele Chen ; Jianping Wang ; Jeonggi Kim ; Shaofeng Yu ; Jingang Wu ; Yinyin Lin
Author_Institution :
ASIC & Syst. State Key Lab., Fudan Univ., Shanghai, China
fDate :
Oct. 29 2012-Nov. 1 2012
Abstract :
A novel method for SRAM cell standby leakage measurement is presented, which enables accurate testing and decoupling of sub-threshold leakage (I_sub), gate leakage (I_gate) and junction leakage (I_junc) in each SRAM cell transistor. Moreover, the array based technique can not only precisely measure small current but also compensate the impact from random variations. The front-end SRAM array layout is kept original to preserve actual physical environment. The method is verified in SMIC 65nm technology. The data of I_sub, I_gate and I_junc of pull-down (PD), pull-up (PU) and pass-gate (PG) transistor are collected for process optimization to reduce standby power.
Keywords :
SRAM chips; circuit optimisation; integrated circuit layout; leakage currents; transistor circuits; SMIC technology; SRAM cell standby leakage measurement; SRAM cell transistor; accurate measurement; accurate testing; actual physical environment; decoupling; front-end SRAM array layout; gate leakage; junction leakage; pass-gate transistor; process optimization; pull-down transistor; pull-up transistor; random variations; size 65 nm; sub-threshold leakage; Arrays; Layout; Logic gates; SRAM cells; Semiconductor device measurement; Transistors;
Conference_Titel :
Solid-State and Integrated Circuit Technology (ICSICT), 2012 IEEE 11th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4673-2474-8
DOI :
10.1109/ICSICT.2012.6466714
