• DocumentCode
    3399229
  • Title

    Sidewall smoothing of Si/SiO2 waveguide by excimer laser reformation

  • Author

    Hung, Shih-Che ; Liang, Eih-Zhe ; Lin, Ching-Fuh

  • Author_Institution
    Nat. Taiwan Univ., Taipei
  • fYear
    2007
  • fDate
    July 29 2007-Aug. 11 2007
  • Firstpage
    214
  • Lastpage
    215
  • Abstract
    Smoothing as-etched Si/SiO2 waveguides by laser illumination results in less damage than furnace-treated one and atomic-force-microscopy measurement on the reformed surface gives root-mean-square roughness of 0.24 nm and leads to 0.04 dB/cm of calculated scattering loss.
  • Keywords
    atomic force microscopy; elemental semiconductors; optical waveguides; semiconductor-insulator boundaries; silicon; silicon compounds; surface roughness; surface treatment; Si-SiO2; atomic force microscopy; excimer laser reformation; root-mean-square roughness; sidewall smoothing; waveguide; Atom lasers; Atomic beams; Atomic measurements; Lighting; Loss measurement; Rough surfaces; Smoothing methods; Surface roughness; Surface waves; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nano-Optoelectronics Workshop, 2007. i-NOW '07. International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4244-1591-5
  • Type

    conf

  • DOI
    10.1109/INOW.2007.4302958
  • Filename
    4302958
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3399229