Title :
An analytical damaged submicron MOSFET model for CAD applications
Author :
Bouchakour, R. ; Recoules, H. ; Benzerti, W. ; Petit, H.
Author_Institution :
Dept. d´´Electronique, Ecole Nat. Superieure des Telecommun., Paris, France
Abstract :
This paper presents a generalized version of the MOS charge-sheet model which physically incorporates uniform and/or nonuniform distribution of defects along the channel into the analysis, The model has been applied to study the effect of the localized hot-carrier degradation near the drain on the electrical behavior of a short channel nMOS transistor. A good fit has been achieved between the experimental data and the simulation. In addition, two circuit simulation examples have been examined to qualitatively verify the validity of the model.
Keywords :
MOS integrated circuits; MOSFET; circuit CAD; digital simulation; hot carriers; integrated circuit design; integrated circuit reliability; semiconductor device models; CAD applications; MOS charge-sheet model; circuit simulation; damaged submicron MOSFET model; electrical behavior; localized hot-carrier degradation; nonuniform distribution; short channel nMOS transistor; uniform distribution; Circuit simulation; Circuit synthesis; Degradation; Electron traps; Hot carrier effects; Hot carrier injection; Hot carriers; MOSFET circuits; Semiconductor process modeling; Voltage;
Conference_Titel :
Circuits and Systems, 1997. Proceedings of the 40th Midwest Symposium on
Print_ISBN :
0-7803-3694-1
DOI :
10.1109/MWSCAS.1997.662363
