• DocumentCode
    3400568
  • Title

    Advancement of MOSFET with the application of hafnium

  • Author

    Devrani, Vijeta ; Srivastava, Viranjay M.

  • Author_Institution
    Dept. of ECE, Jaypee Univ. of Inf. Technol., Solan, India
  • fYear
    2012
  • fDate
    10-12 Jan. 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    In this paper, we have discussed the use of hafnium and its oxide in the designing of a MOSFET in place of silicon and its oxide. The performance of HfO2 for the MOSFET such as oxide capacitance per unit area, threshold voltage, mobility of carriers, drain current, body biasing effect, resistance, capacitance, figure of merit, CMOS switching characteristics with the rise time, fall time, maximum signal frequency, propagation delay and power dissipation have been discussed.
  • Keywords
    CMOS integrated circuits; MOSFET; carrier mobility; hafnium compounds; CMOS switching characteristics; HfO2; MOSFET; body biasing effect; carrier mobility; drain current; fall time; figure of merit; hafnium; maximum signal frequency; oxide capacitance per unit area; power dissipation; propagation delay; resistance; rise time; threshold voltage; Capacitance; Dielectrics; Hafnium compounds; Logic gates; MOSFET circuits; Threshold voltage; CMOS; Hafnium-dioxide; High Dielectric; MOSFET Parameters; VLSI;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computer Communication and Informatics (ICCCI), 2012 International Conference on
  • Conference_Location
    Coimbatore
  • Print_ISBN
    978-1-4577-1580-8
  • Type

    conf

  • DOI
    10.1109/ICCCI.2012.6158903
  • Filename
    6158903
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3400568