Title :
Planarised InP regrowths around tall and narrow mesas using chloride-MOVPE [and electroabsorption modulator fabrication]
Author :
Perrin, S.D. ; Moore, R.T. ; Moodie, D.G. ; Rogers, D.C. ; Barrell, A.H.
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
Abstract :
The introduction of PCl3 into the MOVPE growth process dramatically alters the regrowth of InP around tall, narrow mesas. Planar regions 48 μm wide have been grown around vertical-walled mesas only 1 μm wide. Polycrystalline deposits are completely eliminated from the silica mask. Furthermore, this process has simultaneously produced planarised infilling growth of orthogonal channels. Electroabsorption modulators with low device capacitance and high modulation depth have been fabricated using this process, and have been used in systems operating at 100 Gbit/s
Keywords :
III-V semiconductors; MOCVD; Mach-Zehnder interferometers; electro-optical modulation; electroabsorption; indium compounds; iron; semiconductor epitaxial layers; semiconductor growth; surface treatment; vapour phase epitaxial growth; 1 micron; 48 micron; InP:Fe; Mach-Zehnder interferometer; chloride-MOVPE; electroabsorption modulators; high modulation depth; low device capacitance; orthogonal channels; passive cladding; planarised infilling growth; planarised regrowths; tall narrow mesas; vertical-walled mesas; Epitaxial growth; Epitaxial layers; Indium phosphide; Laboratories; Optical device fabrication; Optical modulation; Optoelectronic devices; Parasitic capacitance; Quantum well devices; Silicon compounds;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773635
