Formation of nanometer-sized Schottky contacts on InP and related materials by in situ electrochemical process

Nanometer-sized Schottky contacts were successfully formed on InP and related materials by combining an in situ electrochemical process and a standard electron beam (EB) lithography. At the initial stage of the optimized electrochemical process, uniform Pt particles with diameter of 26 nm were formed in a self-assembled fashion on unmasked n-InP substrates, and this led to a highest Schottky barrier height (SBH) of 0.86 eV. Under this optimized condition, a mushroom type Pt gate could be formed on EB patterned n-InAlAs substrates. Furthermore, regular arrays of Pt dot with a diameter of 30 nm were selectively fabricated within open circular windows. I-V characteristics measured using a conductive atomic force microscopy (AFM) tip indicated that a single Pt dot formed a well-behaved nanometer Schottky contact