InAlAs/InP/InGaAs/InP DHBTs with a novel composite-emitter design

Author

Driad, R. ; McKinnon, W.R. ; McAlister, S.P. ; Renaud, A. ; Garanzoti, T. ; SpringThorpe, A.J.

Author_Institution

Inst. for Microstruct. Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada

fYear

1999

fDate

1999

Firstpage

435

Lastpage

438

Abstract

We report the design and performance of InAlAs/InP/InGaAs/InP double heterostructure bipolar transistors (DHBTs) with a composite-emitter (CE) design. The CE-DHBT structure combines various advantages of conventional InAlAs/InGaAs and InGaAs/InP HBTs. It allows passivation of the extrinsic base with a selective etch, and also allows the possibility of enhancing performance through nonequilibrium transport in the base. The CE-DHBT structure demonstrated an offset voltage (ΔV_CE0) of 0.25 V with a saturation voltage (V _SAT) of 0.6 V and a dc current gain of 25 for a base doping level of 7×10¹⁹ cm^-3

Keywords

III-V semiconductors; aluminium compounds; etching; gallium arsenide; heterojunction bipolar transistors; indium compounds; DC current gain; DHBT; InAlAs-InP-InGaAs-InP; composite-emitter; double heterostructure bipolar transistors; nonequilibrium transport; offset voltage; passivation; saturation voltage; selective etch; Bipolar transistors; Composite materials; Double heterojunction bipolar transistors; Electrons; Etching; Gallium arsenide; Indium compounds; Indium gallium arsenide; Indium phosphide; Passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on

Conference_Location

Davos

ISSN

1092-8669

Print_ISBN

0-7803-5562-8

Type

conf

DOI

10.1109/ICIPRM.1999.773726

Filename

773726