Title :
MOCVD growth assessment of the first all monolithic 1.56 μm VCSELs with GaInAlAs/InP system
Author :
Sagnes, I. ; Le Roux, G. ; Legay, P. ; Kazmierski, C. ; Palmier, J.F. ; Debray, J.P.
Author_Institution :
France Telecom, CNET, Bagneux, France
Abstract :
Using an InP lattice matched InGaAlAs/InAlAs system we have grown in a single epitaxial step the first all-monolithic vertical laser structure on InP substrate. Pulse lasing at 1.56 μm has been obtained up to +55°C with 45 μm diameter planar diodes defined by proton implantation. Thermal resistance of bottom emitting lasers about 420 K/W has been estimated from Fabry-Perot cavity wavelength shift. The reported characterizations indicate the potential of this material system laser for CW operation and for a simple large-scale industrial processing
Keywords :
Fabry-Perot resonators; III-V semiconductors; MOCVD; aluminium compounds; gallium compounds; indium compounds; integrated optics; ion implantation; semiconductor doping; semiconductor growth; semiconductor lasers; surface emitting lasers; vapour phase epitaxial growth; 1.56 mum; CW operation; Fabry-Perot cavity wavelength shift; GaInAlAs; GaInAlAs/InP system; InGaAlAs/InAlAs system; InP; InP substrate; MOCVD growth assessment; all monolithic 1.56 μm VCSELs; bottom emitting lasers; characterizations; large-scale industrial processing; planar diodes; proton implantation; pulse lasing; single epitaxial step; thermal resistance; vertical laser structure; Diodes; Fabry-Perot; Indium compounds; Indium phosphide; Lattices; MOCVD; Optical materials; Protons; Substrates; Thermal resistance;
Conference_Titel :
Indium Phosphide and Related Materials, 1999. IPRM. 1999 Eleventh International Conference on
Conference_Location :
Davos
Print_ISBN :
0-7803-5562-8
DOI :
10.1109/ICIPRM.1999.773751
