• DocumentCode
    34017
  • Title

    Cross-Coupled Current Conveyor Based CMOS Transimpedance Amplifier for Broadband Data Transmission

  • Author

    Chen, D. ; Kiat Seng Yeo ; Xiaomeng Shi ; Manh Anh Do ; Chirn Chye Boon ; Wei Meng Lim

  • Author_Institution
    Div. of Circuits & Syst., Nanyang Technol. Univ., Singapore, Singapore
  • Volume
    21
  • Issue
    8
  • fYear
    2013
  • fDate
    Aug. 2013
  • Firstpage
    1516
  • Lastpage
    1525
  • Abstract
    This paper presents a novel cross-coupled current conveyor based CMOS transimpedance amplifier (TIA) design to obtain an input capacitive load insensitive and very low noise structure. The proposed structure is presented with an implementation in GlobalFoundries´ 0.18- μm 1.8-V industry compatible CMOS technology. The whole TIA circuit consumes only 31.5 mW of dc power. Measured results show a -3 dB bandwidth of about 4 GHz with a 0.25 pF photodiode capacitance. The single-ended transimpedance gain for positive output port is 46 dB Ω. The measured single-ended input-referred noise current spectral density is kept below 18 pA/√{Hz} within the TIA frequency band. The optical sensitivity for a bit-error-rate of 10-12 is -15 dBm with 4.25 Gb/s 231-1 proactive Reed-Solomon bypass data pattern. This cross-coupled structure also facilitates building an input-insensitive differential TIA. The simulation result shows a stable frequency response over a wide range of input capacitance from 0.05 to 0.5 pF.
  • Keywords
    CMOS analogue integrated circuits; current conveyors; data communication; operational amplifiers; photodiodes; CMOS TIA design; CMOS transimpedance amplifier; GlobalFoundries industry compatible CMOS technology; bit error rate; broadband data transmission; cross-coupled current conveyor; frequency response; input capacitive load; input-insensitive differential TIA; low-noise structure; optical sensitivity; photodiode capacitance; power 31.5 mW; proactive Reed-Solomon bypass data pattern; single-ended input-referred noise current spectral density; single-ended transimpedance gain; size 0.18 mum; voltage 1.8 V; Bandwidth; CMOS integrated circuits; Capacitance; Impedance; Noise; Photodiodes; Transistors; Bandwidth enhancement; broadband; cross-coupled current conveyor; transimpedance amplifier;
  • fLanguage
    English
  • Journal_Title
    Very Large Scale Integration (VLSI) Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1063-8210
  • Type

    jour

  • DOI
    10.1109/TVLSI.2012.2211086
  • Filename
    6423289