A CAD model for MOS transistors valid in all regions of operation

Author

Kushaa, A. Afzali ; El Nokali, M.

Author_Institution

Dept. of Electr. Eng., Pittsburgh Univ., PA, USA

fYear

1991

fDate

14-17 May 1991

Firstpage

364

Abstract

An accurate and computationally efficient charge-based model for the intrinsic capacitances in MOS transistors is proposed. The model is valid in the subthreshold regime and is based on the quasi-static approximation. By integrating this model with a corresponding one in the strong inversion regime, a complete model valid in all regions of operation is presented. An interpolation scheme which guarantees the continuity of the drain current and the capacitances as well as their derivatives is used to provide a smooth transition from subthreshold to strong inversion. The theoretical predictions of the model are compared to the numerically simulated data extracted from MINIMOS 4.0 and are found to be in good agreement over a wide range of voltages

Keywords

circuit CAD; insulated gate field effect transistors; interpolation; inversion layers; semiconductor device models; CAD model; MINIMOS 4.0; MOS transistors; charge-based model; drain current; interpolation scheme; intrinsic capacitances; quasi-static approximation; strong inversion regime; subthreshold regime; Capacitance; Circuit simulation; Computational modeling; Electrons; Equations; Extrapolation; Fabrication; Interpolation; MOSFET circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1991., Proceedings of the 34th Midwest Symposium on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-0620-1

Type

conf

DOI

10.1109/MWSCAS.1991.252172

Filename

252172