High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength

Author

Slipchenko, Sergey O. ; Podoskin, Aleksandr A. ; Rozhkov, Alexsander V. ; Pikhtin, Nikita A. ; Tarasov, Ilya S. ; Bagaev, Timur A. ; Zverkov, M.V. ; Konyaev, V.P. ; Kurniavko, Y.V. ; Ladugin, Maxim A. ; Marmalyuk, Aleksandr A. ; Padalitsa, Anatoliy A. ; S

Author_Institution

Centre of Nanoheterostructure Phys., Ioffe Phys.-Tech. Inst., St. Petersburg, Russia

Volume

25

Issue

17

fYear

2013

fDate

Sept.1, 2013

Firstpage

1664

Lastpage

1667

Abstract

High-power pulse semiconductor lasers based on epitaxially integrated thyristor heterostructures were developed. The possibility of generating high-power laser light pulses with duration on the order of 100 ns at control signal amplitude on the order of 40-100 mA at extremely low turn-on thyristor voltage of 10 V was demonstrated. The values reached for the peak pulse optical power and peak pulse current were 28 W and 37 A, respectively.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser transitions; optical pulse generation; semiconductor lasers; thyristors; AlGaAs; control signal amplitude; current 37 A; current 40 mA to 100 mA; epitaxially integrated thyristor heterostructures; high-power laser light pulse generation; high-power pulse semiconductor laser-thyristor; peak pulse current; peak pulse optical power; power 28 W; turn-on thyristor voltage; voltage 10 V; wavelength 900 nm; Optical pulses; Optical pumping; Optical switches; Power lasers; Semiconductor lasers; Thyristors; Laser-thyristor; semiconductor laser; thyristor heterostructure;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2013.2272801

Filename

6557483