Title :
Progress on GaN-based blue light emitting VCSELs and quantum dot lasers
Author :
Arakawa, Y. ; Someya, T.
Author_Institution :
Res. Center for Adv. Sci. & Technol., Tokyo Univ., Japan
Abstract :
Blue nitride semiconductor laser diodes and LEDs have given great impact on both industries and fundamental research. Particularly, blue vertical cavity surface emitting lasers (VCSELs) are expected to play an important role in high density optical storage technologies of the next generation. The main difficulty however for the VCSELs is the crystal growth of highly reflective nitride mirrors. In the paper, we show our recent achievement on growth, optical characterization, and device demonstration for blue nitride-based VCSELs operated at room temperature. In addition, room temperature Fabry-Perot type InGaN quantum dot (QD) lasers are demonstrated
Keywords :
Fabry-Perot resonators; III-V semiconductors; MOCVD; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; semiconductor lasers; semiconductor quantum dots; surface emitting lasers; 298 K; Fabry-Perot type lasers; GaN; GaN-based blue light emitting VCSELs; InGaN; LEDs; VCSELs; blue light emitting laser; blue nitride semiconductor laser diodes; blue vertical cavity surface emitting lasers; crystal growth; device demonstration; fundamental research; growth; high density optical storage; highly reflective nitride mirror; industries; optical characterization; quantum dot lasers; room temperature; Diode lasers; Light emitting diodes; Optical devices; Quantum dot lasers; Quantum dots; Semiconductor lasers; Stimulated emission; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811762