Novel passivation process for GaAs(110) surface with sulf-solutions

Author

Lu, Zhou ; Yunhua, Wang ; Baoshan, Jia ; Duanyuan, Bai ; Jing, Xu ; Xin, Gao ; Baoxue, Bo

Author_Institution

State Key Lab. of High Power Semicond. Lasers, Changchun Univ. of Sci. & Technol., Changchun, China

fYear

2011

fDate

12-16 Oct. 2011

Firstpage

35

Lastpage

37

Abstract

In order to enhance the effect of sulfur passivation, the influence of solution polarity on the passivation was investigated; With the following conclusion: the smaller polarity of the solution, the better effect of the passivation. A novel passivation solution made up of (NH₄)₂S+Se+t-C₄H₉OH has been prepared. The PL spectrum intensity of the samples treated by (NH₄)₂S+Se+t-C₄H₉OH is 23 times stronger than that of non-passivated samples and more efficient than (NH₄)₂S passivation alone. This result indicates that (NH₄)₂S+Se+t-C₄H₉OH solution has a better passivation effect on GaAs(110) surface.

Keywords

III-V semiconductors; gallium arsenide; passivation; photoluminescence; spectral line intensity; sulphur; GaAs; PL spectrum; sulf-solutions; sulfur passivation; Gallium arsenide; Indium gallium arsenide; Optical surface waves; Passivation; Semiconductor lasers; Solvents; GaAs; photoluminescence; polarity; sulphur passivation;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics and Microelectronics Technology (AISOMT), 2011 Academic International Symposium on

Conference_Location

Harbin

Print_ISBN

978-1-4577-0794-0

Type

conf

DOI

10.1109/AISMOT.2011.6159309

Filename

6159309