Title :
Group III-nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy
Author :
Coldren, C.W. ; Spruytte, S.G. ; Harris, J.S. ; Larson, M.C.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
Employing InGaNAs materials, low wavelength active regions with emission at 1.3 μm have been developed on GaAs substrates. Broad area, single quantum well, in-plane lasers with thresholds as low as 1.1 kA/cm2 were fabricated
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser transitions; molecular beam epitaxial growth; quantum well lasers; semiconductor growth; 1.3 mum; GaAs; GaAs substrates; InGaNAs; InGaNAs materials; broad area single quantum well in-plane lasers; elemental source molecular beam epitaxy; group III-nitride-arsenide long wavelength lasers; low wavelength active regions; thresholds; Costs; Diode lasers; Fiber lasers; Gallium arsenide; Molecular beam epitaxial growth; Nitrogen; Optical device fabrication; Optical materials; Quantum well lasers; Threshold current;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811796
