Near room temperature CW lasing operation of a narrow-stripe oxide-confined GaInNAs/GaAs multi-quantum well laser grown by MOCVD

The pulsed and cw lasing operation of a 3QW Ga_0.7In_0.3N_0.003As_9.997/GaAs edge-emitting laser (λ=1.17 μm) have been achieved near room temperature for the first time using an oxide-confined laser design, with the low threshold current densities of 1.0 kA/cm² and 1.7 kA/cm² (at 9 °C), respectively, for a narrow stripe width (8 μm). The active region consists of three 7 nm thick Ga_0.7In_0.3N_0.003As_9.997 quantum wells separated by 10 nm thick GaAs barrier layers, and is bounded on either side by a 140 nm thick undoped GaAs waveguide layer. These are in-turn bounded by p-doped and n-doped Al_0.3Ga_0.7As cladding layers, respectively, and a thin Al_0.98Ga_0.02As selective oxidation layer was added at each GaAs/AlGaAs heterointerface. The epilayer structure was grown by MOCVD on n-type (100) GaAs substrates that are misoriented by 6° towards [111]A, which have demonstrated superior photoluminescence compared to structures grown on O°-off substrates