Title :
High power 3-12 μm laser diodes, recent advances and future trend
Author_Institution :
Dept. of Electr. Eng., Northwestern Univ., Evanston, IL, USA
Abstract :
High performance interband laser structures emitting between 3 to 5 μm based on the InAsSbP material system have been developed. Lasers based on interband transitions offer advantages of high efficiencies and high output powers while requiring a low threshold power. Currently, three types of interband laser structures are considered as promising high power high temperature lasers: InAs-InAsSb-AlAsSb double heterostructures (DH), InAs-InAsSb-InAsP and InAs-InAsSb strained-layer superlattices (SLS)
Keywords :
III-V semiconductors; indium compounds; laser transitions; quantum well lasers; technological forecasting; 3 to 12 mum; InAs-InAsSb; InAs-InAsSb strained-layer superlattices; InAs-InAsSb-AlAsSb; InAs-InAsSb-AlAsSb double heterostructures; InAs-InAsSb-InAsP; InAs-InAsSb-InAsP strained-layer superlattices; InAsSbP; InAsSbP material system; future trend; high efficiencies; high output powers; high performance interband laser structures; high power high temperature lasers; low threshold power; quantum cascade laser; recent advances; Bars; Diode lasers; Laser modes; Power generation; Power lasers; Pump lasers; Quantum cascade lasers; Quantum well lasers; Temperature; Threshold current;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811870
