Title :
Oxidised porous silicon waveguide technology for silicon optoelectronics
Author :
Balucani, M. ; Bondarenko, V. ; Fazio, E. ; Lamedica, G. ; Ricciardelli, A. ; Viarengo, E. ; Ferrari, A. ; Bulthuis, H.F. ; van der Vliet, F.M. ; Broquin, J.E. ; Vitrant, G.
Author_Institution :
Dipt. di Ingegneria Elettronica, Rome Univ., Italy
Abstract :
The work presented, that is a part of the ongoing European project OLSI no. 28934, overcomes problems by an OPSWG (oxidized porous silicon waveguide). In order to provide confinement and propagation of light within the waveguide (WG), the guiding region (core) has to have a higher refractive index than the surrounding cladding regions. Such construction of a WG can be provided by a variation of anodization regimes during the PS (porous silicon) formation. The technological process of the OPSWG fabrication consists of three main steps: (a) anodization of Si through the openings in a mask to form PS; (b) thermal oxidation of PS; (c) high temperature densification of OPS
Keywords :
ULSI; anodisation; densification; integrated optics; integrated optoelectronics; optical fabrication; optical waveguides; oxidation; silicon; European project OLSI; OPSWG fabrication; Si; anodization regimes; cladding regions; guiding region; high temperature densification; higher refractive index; mask; optical waveguide light propagation; oxidised porous silicon waveguide technology; oxidized porous silicon waveguide; porous silicon; silicon optoelectronics; thermal oxidation; Electron optics; High speed optical techniques; Integrated circuit interconnections; Integrated circuit technology; Optical attenuators; Optical waveguides; Shape; Silicon; Telephony; Ultra large scale integration;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811892
