Title :
Improved device performance using a semi-transparent p-contact AlGaN/GaN heterojunction p-i-n photodiode
Author :
Collins, C.J. ; Li, T. ; Beck, A.L. ; Dupuis, R.D. ; Campbell, J.C. ; Carrano, J.C. ; Schurman, M.J. ; Ferguson, I.A.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
GaN is well suited as the absorbing region for ultraviolet (UV) photodetectors. To reduce the field crowding and improve the series resistance, an AlGaN/GaN heterojunction p-i-n photodiode with a semi-transparent p-contact has been designed. In this structure a thin p-metal of 50 Å Ni/100 Å Au covers the entire mesa. This results in a uniform distribution of the electric field throughout the device active volume
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; p-i-n photodiodes; ultraviolet detectors; wide band gap semiconductors; 100 A; 50 A; AlGaN-GaN; Ni-Au; device active volume; electric field uniform distribution; field crowding; improved device performance; mesa; semi-transparent p-contact AlGaN/GaN heterojunction p-i-n photodiode; series resistance; thin p-metal; ultraviolet photodetectors; Aluminum gallium nitride; Electric resistance; Gallium nitride; Heterojunctions; Military computing; P-i-n diodes; PIN photodiodes; Photodetectors; Photonics; Schottky diodes;
Conference_Titel :
LEOS '99. IEEE Lasers and Electro-Optics Society 1999 12th Annual Meeting
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-5634-9
DOI :
10.1109/LEOS.1999.811910
