A comparative variability analysis for CMOS and CNFET 6T SRAM cells

Author

Almudever, C.G. ; Rubio, Albert

Author_Institution

Electron. Eng. Dept., UPC, Barcelona, Spain

fYear

2011

fDate

7-10 Aug. 2011

Firstpage

1

Lastpage

4

Abstract

Statistical device variability may be a limiting factor for further miniaturizing nodes in silicon bulk CMOS technology. On the other hand, in novel technologies such as Carbon Nanotubes Field Effect Transistors (CNFETs), the device variability is also present and is mainly due to imperfections inherent in current carbon nanotube (CNT) growth methods. The goal of this paper is to evaluate the impact of the main sources of variability in conventional MOSFET and CNFET 6T SRAM cells through the consideration of random threshold voltage process variations.

Keywords

CMOS digital integrated circuits; MOSFET; SRAM chips; carbon nanotubes; C; CMOS technology; CNFET 6T SRAM cells; carbon nanotube growth methods; carbon nanotubes field effect transistors; comparative variability analysis; conventional MOSFET; device variability; random threshold voltage process variations; CMOS integrated circuits; CMOS technology; Electron tubes; FETs; Random access memory; Semiconductor device modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2011 IEEE 54th International Midwest Symposium on

Conference_Location

Seoul

ISSN

1548-3746

Print_ISBN

978-1-61284-856-3

Electronic_ISBN

1548-3746

Type

conf

DOI

10.1109/MWSCAS.2011.6026572

Filename

6026572