Title :
High-efficiency and wide-band single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA base station application
Author :
Kawano, Akihiro ; Adachi, Nobuo ; Tateno, Yasunori ; Mizuno, Shin-ya ; Ui, Norihiko ; Nikaido, Jun-ichiro ; Sano, Seigo
Author_Institution :
Eudyna Devices Inc., Yamanash, Japan
Abstract :
In this paper, we present high drain efficiency of 34% and wide-band characteristics of single-ended 200W GaN HEMT power amplifier for 2.1 GHz W-CDMA application. We also confirmed that GaN HEMT power amplifier has low memory effect and adjacent channel leakage power ratio (A.C.L.R.) is sufficiently reduced for the application by utilizing digital predistortion (D.P.D.) system.
Keywords :
HEMT circuits; III-V semiconductors; UHF power amplifiers; code division multiple access; distortion; gallium compounds; wide band gap semiconductors; wideband amplifiers; 2.1 GHz; 200 W; GaN; GaN HEMT power amplifier; W-CDMA base station; adjacent channel leakage power ratio; digital predistortion system; high drain efficiency; low memory effect; wide-band single-ended HEMT power amplifier; Base stations; Broadband amplifiers; Frequency; Gallium nitride; HEMTs; High power amplifiers; Multiaccess communication; Neodymium; Power amplifiers; Radiofrequency amplifiers; GaN HEMT; digital predistortion; high efficiency; power amplifier; wide-band;
Conference_Titel :
Microwave Conference Proceedings, 2005. APMC 2005. Asia-Pacific Conference Proceedings
Print_ISBN :
0-7803-9433-X
DOI :
10.1109/APMC.2005.1606618
