• DocumentCode
    3409017
  • Title

    ELS2: extended life source with dual cathode

  • Author

    Jonoshita, I. ; Sugitani, M. ; Takei, S.

  • Author_Institution
    Sumitomo Eaton Nova Corp., Ehime, Japan
  • Volume
    1
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    239
  • Abstract
    The Extended Life Source (ELS) is currently being used to obtain sufficient beam current and lifetime for the usual well formation implantation. The process of modern well formation requires higher beam current and longer life-time for the highly-charged state operation in high energy implanters. The ELS2, the 2nd generation of the ELS, is developed to meet these requirements, featuring the dual cathode configuration with carefully designed thermal insulation and thicker cathodes. With the ELS2, a much higher current of the p+++ beam is obtained and double the lifetime is observed, compared to the original ELS. Operability of the ELS2 is exactly as same as the ELS and maintainability is considered to be easier
  • Keywords
    ion implantation; ion sources; plasma confinement; plasma density; beam current; dual cathode; extended life source; high energy implanters; highly-charged state; thermal insulation; well formation; Boron; Cathodes; Control systems; Helium; Insulation; Ion sources; Modems; Power supplies; Read only memory; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Ion Implantation Technology Proceedings, 1998 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    0-7803-4538-X
  • Type

    conf

  • DOI
    10.1109/IIT.1999.812096
  • Filename
    812096