Power cycling reliability of IGBT power modules

Author

Sankaran, V.A. ; Chen, C. ; Avant, C.S. ; Xu, X.

Author_Institution

Sci. Res. Lab., Ford Motor Co., Dearborn, MI, USA

Volume

2

fYear

1997

fDate

5-9 Oct 1997

Firstpage

1222

Abstract

The goal of this study was to understand the power cycling reliability of IGBT power modules. These power modules are made up of multi-layer stacks and consist of multiple power dice in parallel. The interconnection schemes within the module include leadframes soldered to substrate, die attachment using solder and wirebonds. Thermal and power cycling fatigues material interfaces because of the CTE mismatch between dissimilar materials. In addition, wirebonds on the dice are prone to debonding because of the thermally induced stresses. Tests were designed to understand the power cycling reliability of these large transistor modules. Results from the tests are summarized in this paper

Keywords

failure analysis; insulated gate bipolar transistors; power bipolar transistors; power integrated circuits; semiconductor device reliability; semiconductor device testing; IGBT power modules; debonding; die attachment; interconnection schemes; leadframes soldering; multi-layer stacks; power cycling fatigue; power cycling reliability; solder; substrate; thermal cycling fatigue; thermally induced stresses; wirebonds; Bonding; Diodes; Insulated gate bipolar transistors; Lead; Multichip modules; Pulse width modulation; Switches; Testing; Thermal stresses; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

0-7803-4067-1

Type

conf

DOI

10.1109/IAS.1997.630841

Filename

630841