Title :
High temperature operation of a dc-dc power converter utilizing SiC power devices
Author :
Ray, Biswajit ; Scofield, James D. ; Spyker, Russell L. ; Jordan, Brett ; Ryu, Sei-Hyung
Author_Institution :
Bloomsburg Univ., PA
Abstract :
Performance of a 2 kW, 40 kHz, 270 V/500 V boost dc-dc power converter as a function of temperature is reported for the following power semiconductor device combinations: Si MOSFET and Si ultrafast diode, and SiC MOSFET and SiC Schottky diode. The test results clearly demonstrate the possibility of designing 200 degC power converters utilizing SiC power semiconductor devices
Keywords :
DC-DC power convertors; MOSFET; Schottky diodes; power semiconductor devices; silicon compounds; wide band gap semiconductors; 2 kW; 200 degC; 270 V; 40 kHz; 500 V; MOSFET; Schottky diode; SiC; dc-dc power converter; power device; power semiconductor device; ultrafast diode; DC-DC power converters; Inductors; MOSFET circuits; Photonic band gap; Power MOSFET; Rectifiers; Schottky diodes; Silicon carbide; Temperature; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2005. APEC 2005. Twentieth Annual IEEE
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-8975-1
DOI :
10.1109/APEC.2005.1452944
