DocumentCode
3409783
Title
Development of cryopump for ion implantation equipment
Author
Furuya, S. ; Terashima, M. ; Morimoto, H. ; Nishihashi, T. ; Kashimoto, K. ; Sakurada, Y.
Author_Institution
ULVAC Cryogenics Inc., Kanagawa, Japan
Volume
1
fYear
1999
fDate
1999
Firstpage
396
Abstract
We developed a new differential pumping type cryopump for implantation equipment, to effectively pumping outgases from resist on a wafer. This cryopump is installed between end station and magnet chamber, and forms a part of beam line. The pressure of acceleration tube may be decreased to less than 1E-4 Pa by using this cryopump. Usual case this pressure is more than 1E-3 Pa
Keywords
beam handling equipment; cryopumping; ion implantation; outgassing; semiconductor device manufacture; semiconductor doping; 1E-4 Pa; acceleration tube pressure; beam line; cryopump; differential pumping type cryopump; end station; ion implantation equipment; magnet chamber; pumping outgas; Computer simulation; Contamination; Design automation; Exhaust systems; Fabrication; Ion implantation; Mass production; Resists; Substrates; Vacuum systems;
fLanguage
English
Publisher
ieee
Conference_Titel
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location
Kyoto
Print_ISBN
0-7803-4538-X
Type
conf
DOI
10.1109/IIT.1999.812137
Filename
812137
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