DocumentCode :
3409994
Title :
Beam current control of an ECR ion source for medium current ion implanter
Author :
Inouchi, Yutaka ; Okuda, Shohei ; Fujita, Hideki ; Sasamura, Yoshitaka ; Naito, Masao
Author_Institution :
High Technol. Res. & New Bus. Div., Nissin Electr. Co. Ltd., Kyoto, Japan
Volume :
1
fYear :
1999
fDate :
1999
Firstpage :
444
Abstract :
ECR ion sources in general have good properties such as long lifetime and high output of multiply charged ions although the dynamic range of beam current is quite narrow. An ECR ion source which can generate a wide range of beam current is developed for a medium current implanter. The source magnetic fields are produced by two solenoids each of which has field decoupling structure. Plasma density at the extraction slit can be changed by adjusting the current of one solenoid while a high density plasma is stably sustained near the microwave window with a constant current of the other solenoid. The beam current of B+ at target is controlled quickly from of 7 μA to 2.5 mA by the current setting of one solenoid
Keywords :
beam handling techniques; ion implantation; ion sources; plasma density; 7 muA to 2.5 mA; ECR ion source; beam current control; medium current ion implanter; multiply charged ions; plasma density; solenoids; Current control; Doping; Dynamic range; Electrodes; Ion sources; Magnetic fields; Plasma density; Plasma sources; Plasma waves; Solenoids;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
Type :
conf
DOI :
10.1109/IIT.1999.812149
Filename :
812149
Link To Document :
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