Title :
An analytical model for beam induced contamination in ion implantation
Author :
Ryssel, Heiner ; Frey, Lothar ; Häublein, Volker ; Lucassen, Martin ; Gyulai, Josef
Author_Institution :
Fraunhofer-Inst. fur Integrierte Schaltungen, Erlangen, Germany
Abstract :
Ion beam induced contamination in ion implanters is controlled by three processes. Impurities are sputtered from components and reach the wafer surface, recoil implantation of contamination and finally impurity removal by ion beam sputtering occurs. An analytical model is presented which describes these processes and the resulting beam induced contamination. Simulation data are compared to experimental data to determine model parameters
Keywords :
impurities; ion implantation; semiconductor doping; semiconductor process modelling; sputtering; surface contamination; analytical model; beam induced contamination; impurities; impurity removal; ion beam induced contamination; ion beam sputtering; ion implantation; ion implanters; recoil implantation; sputtered components; wafer surface; Analytical models; Apertures; Atomic beams; Atomic layer deposition; Impurities; Ion beams; Ion implantation; Particle beams; Sputtering; Surface contamination;
Conference_Titel :
Ion Implantation Technology Proceedings, 1998 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
0-7803-4538-X
DOI :
10.1109/IIT.1999.812161
