• DocumentCode
    3411706
  • Title

    Microstructure study of Bi4Ti3O12-SrBi4O15 and Bi3.25La0.75Ti3O12-SrBi4Ti4O15 ceramics

  • Author

    Su, D. ; Zhu, J.S. ; Wang, D.Y. ; Chad, H.L.W. ; Choy, C.L. ; Wang, Y.N.

  • Author_Institution
    Nat. Lab. of Solid State Microstructures, Nanjing Univ., China
  • fYear
    2002
  • fDate
    28 May-1 June 2002
  • Firstpage
    71
  • Lastpage
    74
  • Abstract
    TEM study is preformed on mixed-layer type bismuth compounds: Bi4Ti3O12-SrBi4T4O15 (BT-SBTi) and Bi3.25La0.75Ti3O12-SrB4T4O15 (BLT-SBTi) ceramics. Meeting the prediction of space group theory, APBs and 90° domain wall are observed by bright- and dark-field imaging in both materials. Besides, other planer defects are found and confirmed to be stacking faults.
  • Keywords
    antiphase boundaries; bismuth compounds; crystal microstructure; electric domain walls; ferroelectric ceramics; lanthanum compounds; stacking faults; strontium compounds; transmission electron microscopy; 90° domain wall; Bi3.25La0.75Ti3O12-SrBi4Ti4O15; Bi4Ti3O12-SrBi4O15; TEM; antiphase boundaries; ferroelectric ceramics; microstructure; planer defects; space group theory; stacking faults; Argon; Bismuth; Ceramics; Diffraction; Ferroelectric materials; Microstructure; Milling; Prototypes; Superlattices; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Applications of Ferroelectrics, 2002. ISAF 2002. Proceedings of the 13th IEEE International Symposium on
  • ISSN
    1099-4734
  • Print_ISBN
    0-7803-7414-2
  • Type

    conf

  • DOI
    10.1109/ISAF.2002.1195873
  • Filename
    1195873
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3411706