DocumentCode :
3412580
Title :
A small GSM power amplifier module using Si-LDMOS driver MMIC
Author :
Shimizu, Tsuyoshi ; Nunogawa, Y. ; Furuya, Tadasuke ; Yamada, Shigeru ; Yoshida, Isao
Author_Institution :
Renesas Technol., Gunma, Japan
fYear :
2004
fDate :
15-19 Feb. 2004
Firstpage :
196
Abstract :
A small quad-band Si-MOS high power amplifier module with a package size of 8x8 mm2 includes a driver MMIC in an LDMOS process and provides a built-in power control loop employing a current sense method. The IC achieves 53% power efficiency at 35dBm output power over the 824 to 915MHz GSM band using a 3.6V supply.
Keywords :
CMOS analogue integrated circuits; MMIC power amplifiers; UHF integrated circuits; UHF power amplifiers; cellular radio; current mirrors; field effect MMIC; power control; 3.6 V; 824 to 915 MHz; CMOS process; LDMOS driver MMIC; automatic power control function; built-in power control loop; cellular phones; current sense method; current-mirror biasing circuit; function-integrated approach; quad-band high power amplifier; small GSM power amplifier module; three-stage amplifier; Costs; Driver circuits; GSM; MMICs; MOSFETs; Power amplifiers; Power generation; Power system reliability; Temperature; Voltage control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN :
0193-6530
Print_ISBN :
0-7803-8267-6
Type :
conf
DOI :
10.1109/ISSCC.2004.1332661
Filename :
1332661
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3412580
بازگشت