• DocumentCode
    3412909
  • Title

    Integration of RF MEMS switches with pHEMT MMICs on GaAs

  • Author

    Wang, Huifang ; Lee, Kung-Yen ; Seah, Y.M. ; Ang, K.S. ; Ng, G.I.

  • Author_Institution
    Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2011
  • fDate
    3-5 Aug. 2011
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches are highly linear, low loss, inherently broadband with low power consumption. Given its nearly ideal technical switching specifications, highly complex, agile switching circuits using RF MEMS will be possible. RF MEMS switches integrated with Monolithic Microwave Integrated Circuits (MMIC) on GaAs platform will further exploit the strengths of both GaAs based MMIC technology with the near ideal switching capabilities of RF MEMS switches. In this talk, the fabrication process will be discussed. Experimental results on the integration of RF MEMS switches with GaAs pHEMT MMICs will be presented. Our work demonstrates the technology capabilities to extend the current MEMS technology towards fully MMIC-RF MEMS compatibility on GaAs platform.
  • Keywords
    MMIC; gallium arsenide; high electron mobility transistors; microswitches; microwave switches; GaAs; RF MEMS switches; fabrication process; low power consumption; monolithic microwave integrated circuits; nearly ideal technical switching specifications; pHEMT MMIC; radio frequency microelectromechanical system switches; switching circuits; Gallium arsenide; HEMTs; Logic gates; MMICs; Micromechanical devices; Microswitches; Radio frequency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Defense Science Research Conference and Expo (DSR), 2011
  • Conference_Location
    Singapore
  • Print_ISBN
    978-1-4244-9276-3
  • Type

    conf

  • DOI
    10.1109/DSR.2011.6026872
  • Filename
    6026872