DocumentCode
3412909
Title
Integration of RF MEMS switches with pHEMT MMICs on GaAs
Author
Wang, Huifang ; Lee, Kung-Yen ; Seah, Y.M. ; Ang, K.S. ; Ng, G.I.
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
fYear
2011
fDate
3-5 Aug. 2011
Firstpage
1
Lastpage
4
Abstract
Radio Frequency Micro-Electro-Mechanical Systems (RF MEMS) switches are highly linear, low loss, inherently broadband with low power consumption. Given its nearly ideal technical switching specifications, highly complex, agile switching circuits using RF MEMS will be possible. RF MEMS switches integrated with Monolithic Microwave Integrated Circuits (MMIC) on GaAs platform will further exploit the strengths of both GaAs based MMIC technology with the near ideal switching capabilities of RF MEMS switches. In this talk, the fabrication process will be discussed. Experimental results on the integration of RF MEMS switches with GaAs pHEMT MMICs will be presented. Our work demonstrates the technology capabilities to extend the current MEMS technology towards fully MMIC-RF MEMS compatibility on GaAs platform.
Keywords
MMIC; gallium arsenide; high electron mobility transistors; microswitches; microwave switches; GaAs; RF MEMS switches; fabrication process; low power consumption; monolithic microwave integrated circuits; nearly ideal technical switching specifications; pHEMT MMIC; radio frequency microelectromechanical system switches; switching circuits; Gallium arsenide; HEMTs; Logic gates; MMICs; Micromechanical devices; Microswitches; Radio frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Defense Science Research Conference and Expo (DSR), 2011
Conference_Location
Singapore
Print_ISBN
978-1-4244-9276-3
Type
conf
DOI
10.1109/DSR.2011.6026872
Filename
6026872
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