DocumentCode :
3413560
Title :
Si nanodevices for random number generating circuits for cryptographic security
Author :
Fujita, S. ; Uchida, Kazunori ; Yasuda, Shuhei ; Ohba, R. ; Nozaki, H. ; Tanamoto, Tetsufumi
Author_Institution :
Toshiba, Kawasaki, Japan
fYear :
2004
fDate :
15-19 Feb. 2004
Firstpage :
294
Abstract :
Small random-number-generating circuits for cryptographic security using Si nano-devices are described. The basis of these circuits is that nano-devices hold random electrical properties naturally that were previously regarded as a negative feature. Results of statistical tests indicate that these circuits generate extremely high-quality random numbers with relatively few transistors.
Keywords :
MOSFET; cryptography; elemental semiconductors; multivibrators; nanoelectronics; percolation; random number generation; silicon; single electron transistors; MOS gate; Si; astable multivibrator; cryptographic security; high generation rate; high-quality random numbers; percolation channels; percolation leakage paths; random number generating circuits; silicon nanodevices; single-electron transistor; single-electron trap; small security devices; soft breakdown; statistical tests; Breakdown voltage; Circuit testing; Counting circuits; Cryptography; Electron traps; Fluctuations; Frequency; Random number generation; Security; Stochastic processes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Circuits Conference, 2004. Digest of Technical Papers. ISSCC. 2004 IEEE International
ISSN :
0193-6530
Print_ISBN :
0-7803-8267-6
Type :
conf
DOI :
10.1109/ISSCC.2004.1332710
Filename :
1332710
Link To Document :
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