Title :
The effect of statistical dopant fluctuations on MOS device performance
Author :
Stolk, P.A. ; Klaassen, D.B.M.
Author_Institution :
Philips Res. Lab., Eindhoven, Netherlands
Abstract :
The device simulator MINIMOS has been used to quantify the influence of intrinsic dopant fluctuations on the spreading and correlations of a large set of transistor and compact model parameters. It is demonstrated that the contribution of dopant fluctuations to MOS transistor matching can be drastically reduced by novel device designs using ground-plane channel profiles.
Keywords :
MOSFET; doping profiles; semiconductor device models; semiconductor doping; MINIMOS device simulator; MOS transistor matching; compact model parameters; ground-plane channel profile; statistical dopant fluctuations; Analytical models; Atomic layer deposition; Doping; Fluctuations; Laboratories; MOS devices; MOSFETs; Semiconductor process modeling; Solid modeling; Threshold voltage;
Conference_Titel :
Electron Devices Meeting, 1996. IEDM '96., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-3393-4
DOI :
10.1109/IEDM.1996.554061
